• Part: XP3NA2R7CMT
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 324.72 KB
Download XP3NA2R7CMT Datasheet PDF
YAGEO
XP3NA2R7CMT
Description XP3NA2R7C series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is patible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) 30V 2.7mΩ PMPAK® 5x6 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage Gate-Source Voltage +20 ID@TC=25℃ Drain Current, VGS @ 10V4(Silicon Limited) ID@TC=25℃ Drain Current, VGS @ 10V4(Package Limited) ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM Drain Current, VGS @ 10V Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 PD@TC=25℃ PD@TA=25℃ EAS Total Power Dissipation Total Power...