XP3NA4R2AYT
Description
XP3NA4R2A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The PMPAK ® 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
BVDSS RDS(ON)
30V 4.2mΩ
PMPAK® 3 x 3
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
+20
ID@TC=25℃
Drain Current, VGS @ 10V4(Silicon Limited)
ID@TC=25℃
Drain Current, VGS @ 10V4(Package Limited)
ID@TC=100℃
Drain Current, VGS @ 10V4(Package Limited)
ID@TA=25℃
Drain Current, VGS @ 10V3
ID@TA=70℃
Drain Current, VGS @ 10V3
Pulsed Drain Current1
PD@TC=25℃
To...
