Datasheet4U Logo Datasheet4U.com

XP3P010I - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3P010 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet Details

Part number XP3P010I
Manufacturer YAGEO
File Size 220.20 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP3P010I Datasheet

📁 Similar Datasheet

  • XP301-149 - POWER Transformer (XUYI)
  • XP3112 - Photomultiplier (Photonis)
  • XP3182 - 18V 2A Synchronous Buck Converter (ChipSourceTek)
  • XP3182 - 18V 2A Synchronous Buck Converter (FINE MADE ELECTRONICS)
  • XP3201 - 2.5A Synchronous Step-Down Converter (XySemi)
  • XP3462 - Photo Tube (Photonis)
  • XP3473 - Synchronous Step-Down Converter (Aerosemi)
Other Datasheets by YAGEO
  • XP3P010AMT - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP3P010H - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP3P010M - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP3P010YT - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP3P011YT - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP3P020H - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP3P020J - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP3P020M - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
XP3P010I Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description XP3P010 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
Published: |