XP3P021M - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3P021 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

YAGEO

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Datasheet Details

Part number	XP3P021M
Manufacturer	YAGEO
File Size	246.16 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	XP3P021M Datasheet

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Full PDF Text Transcription

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XP3P021M Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant & Halogen-Free S Description XP3P021 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Published: Jul 6, 2025 |