XP3P080N - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3P080 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

YAGEO

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Datasheet Details

Part number	XP3P080N
Manufacturer	YAGEO
File Size	157.41 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	XP3P080N Datasheet

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Full PDF Text Transcription

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XP3P080N Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive D ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free S SOT-23S G Description XP3P080 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23S package is widely preferred for commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID -30V 80mΩ -3.

Published: Jul 5, 2025 |