• Part: XP3P3R0MT
  • Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 324.94 KB
Download XP3P3R0MT Datasheet PDF
YAGEO
XP3P3R0MT
Description XP3P3R0 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. BVDSS RDS(ON) ID4 -30V 3mΩ -125A PMPAK® 5x6 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage -30 Gate-Source Voltage +20 ID@TC=25℃ Drain Current (Chip), VGS @ 10V4 -125 ID@TC=25℃ Drain Current, VGS @ 10V4(Package Limited) -60 ID@TA=25℃ Drain Current3, VGS @ 10V -33.5 ID@TA=70℃ Drain Current3, VGS @ 10V -26.8 Pulsed Drain...