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XP3P7R0EP - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP3P7R0E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP3P7R0EP
Manufacturer YAGEO
File Size 191.78 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP3P7R0EP Datasheet

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Full PDF Text Transcription

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XP3P7R0EP Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free D BVDSS RDS(ON) ID HBM ESD S -30V 7mΩ -75A 2KV Description XP3P7R0E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package.
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