• Part: XP40P03GI
  • Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 250.24 KB
Download XP40P03GI Datasheet PDF
YAGEO
XP40P03GI
Description XP40P03 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all mercialindustrial through hole applications. The mold pound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID -30V 28mΩ -30A TO-220CFM(I) Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor -30 +20 -30 -18 -120 31.3 0.25 V V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 ℃ -55 to...