XP4509GM
Description
XP4509 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
30V 14mΩ
10A -30V 20mΩ -8.4A
D2
The SO-8 package is widely preferred for all mercial-
G1
G2 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch
S1
S2 applications.
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
Drain-Source Voltage
-30
VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
+20
+20
-8.4
-6.7
-30
V A A A W W/℃
TSTG
Storage Temperature...
