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XP4509GM - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP4509 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP4509GM
Manufacturer YAGEO
File Size 228.01 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP4509GM Datasheet

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Full PDF Text Transcription

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XP4509GM Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Performance D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free SO-8 N-CH G2 S2 P-CH G1 S1 Description XP4509 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 30V 14mΩ 10A -30V 20mΩ -8.4A D2 The SO-8 package is widely preferred for all commercial- G1 G2 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch S1 S2 applications.
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