Datasheet Details
| Part number | XP4525GEH |
|---|---|
| Manufacturer | YAGEO |
| File Size | 209.15 KB |
| Description | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP4525GEH-YAGEO.pdf |
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Overview: XP4525GEH Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D1/D2 N-CH ▼ Good Thermal Performance ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free S1 G1 S2 G2.
| Part number | XP4525GEH |
|---|---|
| Manufacturer | YAGEO |
| File Size | 209.15 KB |
| Description | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP4525GEH-YAGEO.pdf |
|
|
|
TO-252-4L XP4525 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 40V 28mΩ 15A -40V 42mΩ -12A D2 S1 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS VGS ID@TC=25℃ ID@TC=70℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 40 -40 ±16 ±16 15.0 -12.0 12.0 -10.0 50 -50 10.4 0.083 V V A A A W W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Value 12 110 Unit ℃/W ℃/W 1 202312076YAGEO XP4525GEH N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=6A VGS=4.5V, ID=4A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=6A Drain-Source Leakage Current VDS=40V, VGS=0V Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V Gate-Source Leakage VGS=±16V Total Gate Charge ID=6A Gate-Source Charge VDS=20V Gate-Drain ("Miller") Charge VGS=4.5V Turn-on Delay Time Rise Time Tur
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