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XP4A021M - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

fast switching performance.

applications.

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Datasheet Details

Part number XP4A021M
Manufacturer YAGEO
File Size 248.40 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP4A021M Datasheet

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Full PDF Text Transcription

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XP4A021M Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID3 40V 21mΩ 9.6A Description XP4A021 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and D1 D2 fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 G2 The SO-8 package is widely preferred for all commercial- S1 S2 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
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