• Part: XP4N3R2MT
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 323.89 KB
Download XP4N3R2MT Datasheet PDF
YAGEO
XP4N3R2MT
Description XP4N3R2 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is patible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) 40V 3.2mΩ PMPAK® 5x6 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V4(Silicon Limited) Drain Current, VGS @ 10V4 Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Single Pulse Avalanche Energy5 Storage Temperature Range Operating Junction Temperature...