• Part: XP4P090N
  • Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 153.14 KB
Download XP4P090N Datasheet PDF
YAGEO
XP4P090N
Description XP4P090 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23S package is widely preferred for mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID -40V 90mΩ -3A Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage -40 VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 -3 -2.5 -12 -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient3 Value 100 Unit...