XP5322GM datasheet by YAGEO.
| Part number | XP5322GM |
|---|---|
| Datasheet | XP5322GM-YAGEO.pdf |
| File Size | 241.69 KB |
| Manufacturer | YAGEO |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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XP5322 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an G1 extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID D1 G2 S1 100V 250mΩ 1.9A D2 S2 The SO-8 package is widely preferred for all mercialindustrial surface mount applications using infrared reflow...
| Part Number | Description |
|---|---|
| XP50AN1K0H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP50AN1K0I | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP50AN1K5I | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP50AN1K5P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP50AN1K7FI | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP50AN270I | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP50AN270IN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP50AN500I | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP50AN500IN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP50AN500IT | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
