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XP5322GM - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

fast switching performance.

applications.

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Datasheet Details

Part number XP5322GM
Manufacturer YAGEO
File Size 241.69 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP5322GM Datasheet

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Full PDF Text Transcription

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XP5322GM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Description XP5322 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an G1 extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID D1 G2 S1 100V 250mΩ 1.9A D2 S2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
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