Datasheet Details
| Part number | XP5322GM |
|---|---|
| Manufacturer | YAGEO |
| File Size | 241.69 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP5322GM-YAGEO.pdf |
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Overview: XP5322GM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant D2 D2 D1 D1 SO-8 G2 S2 G1.
| Part number | XP5322GM |
|---|---|
| Manufacturer | YAGEO |
| File Size | 241.69 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP5322GM-YAGEO.pdf |
|
|
|
XP5322 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an G1 extreme efficient device for use in a wide range of power applications.
BVDSS RDS(ON) ID D1 G2 S1 100V 250mΩ 1.9A D2 S2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
Compare XP5322GM distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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