XP5521GM Description
XP5521 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. Units - - 1.3 V - 35 - ns - 50 - nC 2 XP5521GM P-CH @Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.