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XP5N2K2EN1 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP5N2K2E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP5N2K2EN1
Manufacturer YAGEO
File Size 210.86 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP5N2K2EN1 Datasheet

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Full PDF Text Transcription

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XP5N2K2EN1 Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 0.9V Very Low Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Performance G ▼ RoHS Compliant & Halogen-Free D BVDSS RDS(ON) ID HBM ESD S 50V 2.2Ω 200mA 2KV Description XP5N2K2E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-723 Package with very small footprint is suitable for all commercial-industrial surface mount application.
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