Datasheet4U Logo Datasheet4U.com

XP60AN1K5FI - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP60AN1K5F series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet preview – XP60AN1K5FI

Datasheet Details

Part number XP60AN1K5FI
Manufacturer YAGEO
File Size 212.98 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP60AN1K5FI Datasheet
Additional preview pages of the XP60AN1K5FI datasheet.

📁 Similar Datasheet

  • XP6111 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6112 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6113 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6114 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6115 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6116 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP611FH - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6210 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
  • XP6211 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
  • XP6212 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
Other Datasheets by YAGEO
  • XP60AN1K1IN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP60AN1K1P - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP60AN1K3IT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP60AN1K3J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP60AN2K3H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP60AN2K3I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP60AN2K3J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP60AN4K8H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
XP60AN1K5FI Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description XP60AN1K5F series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID3 600V 1.
Published: |