• Part: XP60SA125DDT8
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 167.88 KB
Download XP60SA125DDT8 Datasheet PDF
YAGEO
XP60SA125DDT8
Description Pin 3,4 Power Source XP60SA125D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PDFN 8X8_HV package is a very low profile for mercialindustrial surface mount application and suited for switching power converters. BVDSS RDS(ON) ID3,4 600V 125mΩ 26.7A Top View 12 34 PDFN 8X8_HV Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage Gate-Source Voltage +20 VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1 +30 A dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …480V ) PD@TC=25℃ Total Power Dissipation PD@TA=25℃ Total Power Dissipation7 Single Pulse Avalanche...