• Part: XP60SC060ADTL
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 295.89 KB
Download XP60SC060ADTL Datasheet PDF
YAGEO
XP60SC060ADTL
Description XP60SC060AD series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TOLL package is a perfect solution for high power density and high power efficiency application. BVDSS RDS(ON) ID3,4 600V 60mΩ 49A G SSS SS SS TOLL (TL) Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage VGS VGS ID@TC=25℃ ID@TC=100℃ IDM dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt Gate-Source Voltage Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1 MOSFET dv/dt Ruggedness (VDS = 0 …480V ) Total Power Dissipation Total Power Dissipation7 Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6 +20 +30 49 31 130 30 277.7 3.12 450 50 V V A A A V/ns W W m J V/ns TSTG TJ Storage...