Datasheet4U Logo Datasheet4U.com

XP65AN470I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

XP65AN470 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet Details

Part number XP65AN470I
Manufacturer YAGEO
File Size 212.63 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP65AN470I Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XP65AN470I Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description XP65AN470 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID3 650V 0.