DESCRIPTION
XP65CM220E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID6 650V 0.22Ω 20.5A G D S TO-252(H) ABSOLUTE MAXIMUM RATINGS
@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage VGS Gate-Source Voltage 650 V +20 V VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V6 Drain Current, VGS @ 10V6 Pulsed Drain Current1 +30 V 20.5 A 12.9 A 55 A dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …480V ) 20 PD@TC=25℃ Total Power Dissipation 104 PD@TA=25℃ Total Power Dissipation5 2 EAS Single Pulse Avalanche Energy3 200 dv/dt Peak Diode Recovery dv/dt4 50 V/ns W W mJ V/ns TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Therm...
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