XP65SA190DP
Description
XP65SA190D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-220 package is widely preferred for all mercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package.
BVDSS RDS(ON) ID3,4
650V 0.19Ω
20A
TO-220(P)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
VGS VGS ID@TC=25℃ ID@TC=100℃ IDM dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt
Gate-Source Voltage
Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …480V ) Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6
+20 +30 20...
