• Part: XP65SA210DDT8
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 167.63 KB
Download XP65SA210DDT8 Datasheet PDF
YAGEO
XP65SA210DDT8
Description Pin 1 Gate Pin 2 Driver Source Pin 3,4 Power Source XP65SA210D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID3,4 650V 210mΩ 17.8A Top View The PDFN 8X8_HV package is a very low profile for mercialindustrial surface mount application and suited for switching power converters. 12 34 PDFN 8X8_HV Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage Gate-Source Voltage +20 VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1 +30 A dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …480V ) PD@TC=25℃ Total Power Dissipation PD@TA=25℃ Total Power...