XP65SL099DR
Description
XP65SL099D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-262 package is widely preferred for mercial-industrial through-hole applications and suited for low voltage applications such as DC/DC converters.
BVDSS
RDS(ON) ID3
650V 99mΩ
38A
TO-262(R)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
VGS VGS ID@TC=25℃ ID@TC=100℃ IDM dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt
Gate-Source Voltage
Gate-Source Voltage, AC (f > 1Hz) Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …480V ) Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy4 Peak Diode Recovery dv/dt5
+20 +30 38 23.5 94 20 277.8
2 768 10
V V A A A...
