• Part: XP6A038MT
  • Description: DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 667.42 KB
Download XP6A038MT Datasheet PDF
YAGEO
XP6A038MT
Description XP6A038 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. S1 G1 S2 G2 D1 D1 D2 D2 S1 G1 S2 G2 PMPAK® 5x6 Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage Gate-Source Voltage +20 ID@TC=25℃ ID@TA=25℃ Drain Current, VGS @ 10V Drain Current, VGS @ 10V3 ID@TA=70℃ IDM Drain Current, VGS @ 10V3 Pulsed Drain Current1 PD@TA=25℃ Total Power Dissipation Single Pulse Avalanche Energy4 18 m J TSTG Storage Temperature Range -55 to 150 ℃ Operating Junction Temperature...