XP6B1K0EU6
Description
D1
D2
XP6B1K0 series are innovated design and silicon process technology
G1
G2 to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
S1
S2
SOT-363 package is ultra-small surface mount package and lead free Ro HS pliant.
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
-60
VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20
-390 m A
-310 m A
-1.6
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Value 450
Unit ℃/W
1 202312011YAGEO
Electrical Characteristics@Tj=25o C(unless otherwise...
