XP6B1K0EU6 datasheet by YAGEO.
| Part number | XP6B1K0EU6 |
|---|---|
| Datasheet | XP6B1K0EU6-YAGEO.pdf |
| File Size | 128.58 KB |
| Manufacturer | YAGEO |
| Description | DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
|
D1 D2 XP6B1K0 series are innovated design and silicon process technology G1 G2 to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. S1 S2 SOT-363 package is ultra-small surface mount package and lead free RoHS pliant.
| Part Number | Description |
|---|---|
| XP60AN1K1IN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN1K1P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN1K3IT | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN1K3J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN1K5FI | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN2K3H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN2K3I | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN2K3J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN4K8H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN4K8IT | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
