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XP6B1K0EU6 - DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

performance.

for use in a wide range of power applications.

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Datasheet Details

Part number XP6B1K0EU6
Manufacturer YAGEO
File Size 128.58 KB
Description DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP6B1K0EU6 Datasheet

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Full PDF Text Transcription

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XP6B1K0EU6 Halogen-Free Product DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Gate Drive ▼ Small Package Outline ▼ Embedded Protection Diode ▼ RoHS Compliant & Halogen Free S2 G2 D1 SOT-363 D2 G1 S1 BVDSS RDS(ON) ID -60V 1Ω -390mA Description D1 D2 XP6B1K0 series are innovated design and silicon process technology G1 G2 to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. S1 S2 SOT-363 package is ultra-small surface mount package and lead free RoHS compliant.
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