• Part: XP6C058YT
  • Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 775.00 KB
Download XP6C058YT Datasheet PDF
YAGEO
XP6C058YT
Description PMPAK® 3x3 P-CH XP6C058 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme G1 efficient device for use in a wide range of power applications. The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. BVDSS RDS(ON) BVDSS RDS(ON) D1 G2 S1 60V 58mΩ -60V 90mΩ D2 S2 Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel Drain-Source Voltage -60 Gate-Source Voltage +20 +20 ID@TC=25℃ Drain Current, VGS @ 10V -9.7 ID@TC=100℃ ID@TA=25℃ Drain Current, VGS @ 10V Drain Current3, VGS @ 10V -6.1 -4 ID@TA=70℃...