Datasheet4U Logo Datasheet4U.com

XP6C058YT - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP6C058 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme G1 efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet Details

Part number XP6C058YT
Manufacturer YAGEO
File Size 775.00 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP6C058YT Datasheet

📁 Similar Datasheet

  • XP6111 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6112 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6113 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6114 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6115 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6116 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP611FH - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6210 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
  • XP6211 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
  • XP6212 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
Other Datasheets by YAGEO
  • XP6C036AM - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP6C036AMT - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP6C036H - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP6C036M - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP6C036MT - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP60AN1K1IN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP60AN1K1P - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP60AN1K3IT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
XP6C058YT Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Good Thermal Performance D1 N-CH D2 ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free S1 G1 S2 G2 Description PMPAK® 3x3 P-CH XP6C058 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme G1 efficient device for use in a wide range of power applications. The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. BVDSS RDS(ON) BVDSS RDS(ON) D1 G2 S1 60V 58mΩ -60V 90mΩ D2 S2 Absolute Maximum Ratings@Tj=25oC.
Published: |