• Part: XP6N021YT
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Manufacturer: YAGEO
  • Size: 282.53 KB
Download XP6N021YT Datasheet PDF
XP6N021YT page 2
Page 2
XP6N021YT page 3
Page 3

Datasheet Summary

Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS pliant & Halogen-Free Description XP6N021 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. BVDSS RDS(ON) 60V 21mΩ PMPAK® 3 x...