| Part number | XP6N100H |
|---|---|
| Datasheet | XP6N100H-YAGEO.pdf |
| File Size | 180.39 KB |
| Manufacturer | YAGEO |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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XP6N100 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID 60V 100mΩ 7.5A G D S TO-252(H) The TO-252 package is widely preferred for all mercial-industrial surface mount applications using infrared reflow...
| Part Number | Description |
|---|---|
| XP6N100JV | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6N021M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6N021YT | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6N023H-AT | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6N036H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6N090G | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6N090K | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6N090LK | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6N090M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6N090N | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
