XP6P050I datasheet by YAGEO.
| Part number | XP6P050I |
|---|---|
| Datasheet | XP6P050I-YAGEO.pdf |
| File Size | 218.35 KB |
| Manufacturer | YAGEO |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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XP6P050 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID4 -60V 50mΩ -19A GD S TO-220CFM(I) The TO-220CFM package is widely preferred for all mercialindustrial through hole applications.
| Part Number | Description |
|---|---|
| XP6P050H | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6P050S | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6P025H | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6P025M | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6P025P | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6P250K | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP6P250N | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN1K1IN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN1K1P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP60AN1K3IT | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
