XP6P250K
Description
XP6P250 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast
G switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package.
-60V 250mΩ
-2.4A D
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
-60
VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20
- 2.4
-2
-10
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Value 45
Unit ℃/W
1 202311271YAGEO
Electrical Characteristics@Tj=25o...
