• Part: XP9410GM
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 241.75 KB
Download XP9410GM Datasheet PDF
YAGEO
XP9410GM
Description XP9410 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID 30V 6mΩ 18A The SO-8 package is widely preferred for all mercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 4.5V3 Drain Current, VGS @ 4.5V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +12 -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value...