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XP9452GG - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP9452 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP9452GG
Manufacturer YAGEO
File Size 202.29 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP9452GG Datasheet

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XP9452GG Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Capable of 2.5V Gate Drive ▼ Simple Drive Requirement ▼ RoHS Compliant D G S Description XP9452 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID 20V 50mΩ 4A D S SOT-89 D G Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 4.5V3 Drain Current, VGS @ 4.
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