Datasheet Details
| Part number | XP9452GG |
|---|---|
| Manufacturer | YAGEO |
| File Size | 202.29 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP9452GG-YAGEO.pdf |
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Overview: XP9452GG Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Capable of 2.
| Part number | XP9452GG |
|---|---|
| Manufacturer | YAGEO |
| File Size | 202.29 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP9452GG-YAGEO.pdf |
|
|
|
XP9452 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
BVDSS RDS(ON) ID 20V 50mΩ 4A D S SOT-89 D G Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 4.5V3 Drain Current, VGS @ 4.5V3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 20 V +16 V 4 A 2.5 A 12 A 1.25 W 0.01 W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 100 Unit ℃/W 1 202312204YAGEO XP9452GG Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
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