• Part: XP9467GH
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 210.59 KB
Download XP9467GH Datasheet PDF
YAGEO
XP9467GH
Description XP9467 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all mercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID 40V 11mΩ 52A GD S TO-252(H) Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V + 20 ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range 33 200 44.6 0.36 2 -55 to 150 -55 to 150 A A W W/℃ W...