DESCRIPTION
XP9565 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID G -40V 38mΩ -6.5A D S ABSOLUTE MAXIMUM RATINGS
@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +16 V -6.5 A -5.2 A -30 A 2.5 W -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 50 Unit ℃/W 1 202312201YAGEO XP9565GEM ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td...
YAGEO
