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XP9926GM - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP9926 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme G1 efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP9926GM
Manufacturer YAGEO
File Size 205.43 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP9926GM Datasheet

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Full PDF Text Transcription

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XP9926GM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Capable of 2.5V Gate Drive ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Description XP9926 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme G1 efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
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