• Part: XP9938GEY
  • Description: DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 237.27 KB
Download XP9938GEY Datasheet PDF
YAGEO
XP9938GEY
Description XP9938 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. BVDSS RDS(ON) ID D1 G1 G2 S1 20V 16mΩ 7.5A D2 S2 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +8 -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 90 Unit ℃/W 1 202312013YAGEO Electrical...