• Part: XP9973GJ
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 174.58 KB
Download XP9973GJ Datasheet PDF
YAGEO
XP9973GJ
Description XP9973 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The straight lead version TO-251 package is widely preferred for all mercial-industrial through hole applications. BVDSS RDS(ON) ID 60V 80mΩ 14A TO-251(J) Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V +20 ID@TC=100℃ IDM PD@TC=25℃ Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal...