• Part: XP9974AGJ
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 174.29 KB
Download XP9974AGJ Datasheet PDF
YAGEO
XP9974AGJ
Description XP9974A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The straight lead version TO-251 package is widely preferred for all mercial-industrial through hole applications. BVDSS RDS(ON) ID 60V 12mΩ 68A GD S TO-251(J) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 60 +20 68 43 272 104 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maixmum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Value 1.2 110 Units ℃/W ℃/W 1 202311221YAGEO Elect...