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XP9976GM - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

fast switching performance.

applications.

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Datasheet Details

Part number XP9976GM
Manufacturer YAGEO
File Size 242.26 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP9976GM Datasheet

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Full PDF Text Transcription

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XP9976GM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free G2 S2 G1 S1 Description XP9976 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and G1 fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID D1 G2 S1 60V 20.5mΩ 7.6A D2 S2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
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