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XP9997GM - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

switching performance.

efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP9997GM
Manufacturer YAGEO
File Size 204.93 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP9997GM Datasheet

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Full PDF Text Transcription

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XP9997GM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Description XP9997 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial- G1 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
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