Datasheet Details
| Part number | XP9997GM |
|---|---|
| Manufacturer | YAGEO |
| File Size | 204.93 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP9997GM-YAGEO.pdf |
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Overview: XP9997GM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1.
| Part number | XP9997GM |
|---|---|
| Manufacturer | YAGEO |
| File Size | 204.93 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP9997GM-YAGEO.pdf |
|
|
|
XP9997 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SO-8 package is widely preferred for all commercial- G1 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
Compare XP9997GM distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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