XP99T03GS
Description
XP99T03 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all mercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
BVDSS
RDS(ON) ID3
30V 2.5mΩ 200A
G D S TO-263(S)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip) Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
+20
-55...
