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XP9T18GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP9T18 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP9T18GH
Manufacturer YAGEO
File Size 210.18 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP9T18GH Datasheet

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Full PDF Text Transcription

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XP9T18GH Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Capable of 2.5V Gate Drive ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free D G S Description XP9T18 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
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