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SHENZHEN YANGJING MICROELECTRONICS CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
SI2301 P-Channel 20-V(D-S) MOSFET
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: A11
SHB
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t ≤5s) Junction Temperature Storage Temperature
VDS VGS ID IDM IS PD R θJA TJ Tstg
Value
-20 ±8 -2.3 -10 -0.72 0.35 357 150 -55 ~+150
Unit V
A
W ℃/W
℃
YANGJING MICROELECTRONICS
www.szyangjing.
A1SHB Datasheet
