SMW200-20C Datasheet | YEONHO ELECTRONICS

Features : n n n n n n n n n n 5V CMOS and TTL patible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight ESD Rating: Class 1B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter ID @VGS = 4.5V,TC = 25°C ID @VGS = 4.5V,TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight - Current is limited by package For footnotes refer to the last page 17- 17- 68 36 0.3 ±12 37 17 3.6 3.75 -55 to 150 300 (for 5s) 0.25 (Typical) Pre-Irradiation Units W/°C V m J A m J V/ns °C g .irf. 07/09/13 Free Datasheet http://.. IRHLNM87Y20 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min - - - 1.0 - 20 - - - - - - - - - - - - - - - Typ Max Units - 0.028 12 11 - -4.2 - - - - - 18 5.0 4.0 18 73 24 10 1.0 2336 596 147 0.76 - - 15 14...