SMW200-40C Datasheet | YEONHO ELECTRONICS

Features : n n n n n n n n n n 5V CMOS and TTL patible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight plimentary P-Channel Available IRHLUC7970Z4 Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp Weight For footnotes refer to the last page 0.89 0.56 3.56 1.0 0.01 ±10 20 0.89 0.1 4.7 -55 to 150 300 (for 5s) 0.2 (Typical) Pre-Irradiation Units W/°C V m J A m J V/ns °C g .irf. 10/18/10 Free Datasheet http://.. IRHLUC770Z4, 2N7617UC Pre-Irradiation Electrical Characteristics For N-Channel Die @Tj = 25°C (Unless Otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min - - 1.0 - 0.25 - - - - - - - - - - - - Typ Max Units - 0.07 - - -4.5 - - - - - - - - - - - -...