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GT3401 - 30V P-Channel MOSFET

Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions Marking D D A16T 3401 SOT-23(.

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Datasheet Details

Part number GT3401
Manufacturer YGMOS
File Size 136.55 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet GT3401 Datasheet

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    YGMOS Technology Crop. 30V P-Channel Enhancement-Mode MOSFET 30V P MOS GT3401 Data Sheet VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A = 60mΩ RDS(ON), Vgs@-4.5V, Ids@-4.0A = 75mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 120mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions Marking D D A16T 3401 SOT-23(PACKAGE) GS GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. 1.90 1.00 0.10 0.40 0.85 Max. REF. 1.30 0.20 1.
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