Datasheet Summary
YGMOS Technology Crop.
30V P-Channel Enhancement-Mode MOSFET
30V P 沟道增强型 MOS 管
Data Sheet
VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A = 60mΩ RDS(ON), Vgs@-4.5V, Ids@-4.0A = 75mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 120mΩ
Features
特性
Advanced trench process technology
高级的加工技术
High Density Cell Design For Ultra Low On-Resistance Package Dimensions 封装尺寸及外形图
极低的导通电阻高密度的单元设计
Marking D
A16T
SOT-23(PACKAGE)
REF.
A B C D E
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50
0 0.10
0.45 0.55
REF.
G H K J L
Millimeter
Min.
1.90 1.00 0.10 0.40 0.85
Max.
REF. 1.30 0.20 1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise...