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1N4448M Datasheet 500mw Do-34 Hermetically Sealed Glass Fast Switching Diodes

Manufacturer: YS

Overview: DATA SHEET SEMICONDUCTOR 500 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes 1N4448M AXIAL LEAD DO34 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units PD Power Dissipation 500 mW TSTG Storage Temperature Range -65 to +200 °C TJ Operating Junction Temperature +175 °C WIV Working Inverse Voltage 75 V IO Average Rectified Current 150 mA IFM Non-repetitive Peak Forward Current 450 mA IFSURGE Peak Forward Surge Current 2A These ratings are limiting values above which the serviceability of the diode may be impaired.

Datasheet Details

Part number 1N4448M
Manufacturer YS
File Size 530.74 KB
Description 500mW DO-34 Hermetically Sealed Glass Fast Switching Diodes
Datasheet 1N4448M-YS.pdf

Key Features

  • Fast Switching Device (TRR.

1N4448M Distributor