Full PDF Text Transcription for RB520S-30 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
RB520S-30. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET SEMICONDUCTOR 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode RB520S-30 H DEVICE MARKING CODES: Device Type RB5...
View more extracted text
hottky Barrier Diode RB520S-30 H DEVICE MARKING CODES: Device Type RB520S-30 Device Marking 5J Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units PD Power Dissipation 200 mW TSTG Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature +150 °C VR IF(AV) Reverse Voltage Average Forward Current 30 V 200 mA IFSM Peak Forward Surge Current (At 8.3ms single half sine-wave) 1A These ratings are limiting values above which the serviceability of the diode may be impaired.
RB520S-30 Datasheet
