YZPST C612PN
HIGH POWER THYRISTOR
APPLICATIONS
C612PNFEATURES
: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS Blocking - Off State VRRM (1) VDRM (1) VRSM (1) 1800 1800 1900 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage IRRM / IDRM Critical rate of voltage rise dV/dt (4) 15 mA 50 mA (3) 500 V/sec Notes: All ratings are specified for Tj=25 oC unless otherwise stated. (1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC. (2) 10 msec. max. pulse width (3) Maximum value for Tj = 125 oC. (4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj